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- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead Exposed Pad
- Supplier Device Package: 8-MINIMOLD
- Power - Max: 410mW
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 75mA, 250mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
- Power - Max: 54mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
- Frequency - Transition: 22GHz
- Gain: 21dB
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
- Power - Max: 250mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Frequency - Transition: 1.2GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 10V
- Frequency - Transition: 850MHz
- Gain: 15dB ~ 23dB
- Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
- Power - Max: 300mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 625mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Frequency - Transition: 700MHz
- Noise Figure (dB Typ @ f): 3dB @ 200MHz
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
- Frequency - Transition: 700MHz
- Gain: 20dB ~ 24dB
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
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