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- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 300mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
- Frequency - Transition: 4GHz
- Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
- Power - Max: 136mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 40mA
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
- Frequency - Transition: 55GHz
- Gain: 10dB ~ 24dB
- Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
- Power - Max: 400mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 250mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Frequency - Transition: 1.9GHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 18mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 300mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- Power - Max: 300mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
- Frequency - Transition: 2.8GHz
- Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
- Power - Max: 400mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 120mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- Power - Max: 450mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Frequency - Transition: 11GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 120mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 300mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
- Frequency - Transition: 150MHz
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
- Power - Max: 135mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
- Frequency - Transition: 25GHz
- Gain: 20dB
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
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