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- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
- Power - Max: 175mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
- Frequency - Transition: 8GHz
- Gain: 17.5dB ~ 21dB
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
- Power - Max: 75mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
- Frequency - Transition: 14GHz
- Gain: 13dB ~ 28dB
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-3D
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
- Frequency - Transition: 37GHz
- Gain: 10.5dB ~ 21.5dB
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
- Frequency - Transition: 46GHz
- Gain: 8B ~ 30.5dB
- Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
- Power - Max: 210mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Frequency - Transition: 14GHz
- Gain: 15.5dB
- Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-2
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
- Frequency - Transition: 45GHz
- Gain: 10.5dB ~ 28.5dB
- Noise Figure (dB Typ @ f): 0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
- Power - Max: 175mW
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Frequency - Transition: 8GHz
- Gain: 20dB
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
- Power - Max: 210mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Frequency - Transition: 14GHz
- Gain: 15.5dB
- Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
- Power - Max: 1W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 210mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
- Frequency - Transition: 5.5GHz
- Gain: 14dB ~ 8.5dB
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-2
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
- Frequency - Transition: 46GHz
- Gain: 7dB ~ 30dB
- Noise Figure (dB Typ @ f): 0.6dB ~ 2dB @ 150MHz ~ 10GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
- Frequency - Transition: 42GHz
- Gain: 11dB ~ 21.5dB
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 280mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 45mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Frequency - Transition: 5GHz
- Gain: 10.5dB ~ 16dB
- Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
- Power - Max: 75mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 2.6V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
- Frequency - Transition: 75GHz
- Gain: 27dB
- Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
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