- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
- Resistance - RDS(On): 7 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: VTFP
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Power - Max: 150mW
- Voltage - Breakdown (V(BR)GSS): 20V
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: SST4117
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 40V
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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- Manufacturer: NTE Electronics, Inc
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: SST4391
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: NXP USA Inc.
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Power - Max: 150mW
- Voltage - Breakdown (V(BR)GSS): 20V
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
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- Manufacturer: NTE Electronics, Inc
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- Manufacturer: Microsemi Corporation
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: LSK170A
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Resistance - RDS(On): 85 Ohms
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Resistance - RDS(On): 300 Ohms
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- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100