- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Power - Max: 150mW
- Voltage - Breakdown (V(BR)GSS): 20V
- Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 200mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
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- Manufacturer: NXP USA Inc.
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Power - Max: 225mW
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92 (TO-226)
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92 (TO-226)
- FET Type: N-Channel
- Power - Max: 310mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Resistance - RDS(On): 18 Ohms
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Power - Max: 625mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Resistance - RDS(On): 60 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: VTFP
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
- Current Drain (Id) - Max: 1 mA
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 175°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-UB (3.09x2.45)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
- Resistance - RDS(On): 80 Ohms
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- Manufacturer: Microsemi Corporation
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCPH
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
- Power - Max: 150mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current Drain (Id) - Max: 20 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
- Power - Max: 200mW
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 10V
- Current Drain (Id) - Max: 20 mA
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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- Offers in stock:
- 10
- 15
- 50
- 100