Found: 1022
  • JFET P-CH 40V 0.225W SOT23
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: P-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
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  • N CHANNEL JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/385
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18 (TO-206AA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
    • Resistance - RDS(On): 25 Ohms
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
    • Power - Max: 350mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
    • Resistance - RDS(On): 5 Ohms
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  • JFET N-CH 30V 625MW TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Power - Max: 625mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
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  • JFET N-CH 2MA 100MW SSSMINI-3P
    Panasonic Electronic Components
    • Manufacturer: Panasonic Electronic Components
    • Mounting Type: Surface Mount
    • Operating Temperature: -20°C ~ 80°C (TA)
    • Package / Case: SOT-723
    • Supplier Device Package: SSSMini3-F1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Power - Max: 100mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V
    • Current Drain (Id) - Max: 2 mA
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  • JFET P-CH 30V 0.225W SOT23
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: P-Channel
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1nA
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  • MOSFET N-CH 40V 200UA TO-206AF
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-206AF, TO-72-4 Metal Can
    • Supplier Device Package: TO-206AF (TO-72)
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
    • Power - Max: 300mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
    • Power - Max: 625mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
    • Resistance - RDS(On): 50 Ohms
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  • JFET
    Microchip Technology
    • Manufacturer: Microchip Technology
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  • JFET N-CH SWITCH CHOPPER
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 175°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
    • Power - Max: 1.8W
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
    • Current Drain (Id) - Max: 50 mA
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
    • Resistance - RDS(On): 60 Ohms
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  • JFET N-CH 30V 350MW SOT23-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
    • Power - Max: 350mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
    • Resistance - RDS(On): 30 Ohms
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  • JFET N-CH 25V 0.35W TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Power - Max: 350mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
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  • P-CHANNEL JFET, TO-236AB
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • FET Type: P-Channel
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
    • Resistance - RDS(On): 125 Ohms
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  • JFET AMPLIFIER - SINGLE, N-CH
    Linear Integrated Systems, Inc.
    • Manufacturer: Linear Integrated Systems, Inc.
    • Series: J212
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
    • Power - Max: 360mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
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  • JFET N-CH MPAK
    Renesas Electronics America
    • Manufacturer: Renesas Electronics America
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: 3-MPAK
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 5V
    • Power - Max: 150mW
    • Voltage - Breakdown (V(BR)GSS): 22V
    • Current - Drain (Idss) @ Vds (Vgs=0): 12mA @ 5V
    • Voltage - Cutoff (VGS off) @ Id: 0V @ 10µA
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