• Manufacturer: onsemi
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 40V
• Resistance - RDS(On): 60 Ohms

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 25V
• Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
• Power - Max: 310mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 135°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92 (TO-226)
• FET Type: P-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA

• Manufacturer: Microsemi Corporation

• Manufacturer: NXP USA Inc.

• Manufacturer: Microchip Technology
• Series: Military, MIL-PRF-19500/385
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18 (TO-206AA)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
• Power - Max: 360mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
• Resistance - RDS(On): 25 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 125°C (TJ)
• Package / Case: SC-72
• Supplier Device Package: 3-SPA
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 15V
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
• Power - Max: 300mW
• Current - Drain (Idss) @ Vds (Vgs=0): 7.3mA @ 5V
• Current Drain (Id) - Max: 50 mA
• Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Power - Max: 625mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
• Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 175°C (TJ)
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: 3-UB (3.09x2.45)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
• Power - Max: 360mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
• Resistance - RDS(On): 30 Ohms

• Manufacturer: Vishay Siliconix
• Mounting Type: Through Hole
• Operating Temperature: -50°C ~ 150°C (TJ)
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-206AF (TO-72)
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
• Power - Max: 300mW
• Voltage - Breakdown (V(BR)GSS): 35V
• Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA

• Manufacturer: Linear Integrated Systems, Inc.
• Series: SST4393
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Resistance - RDS(On): 100 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
• Resistance - RDS(On): 125 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
• Resistance - RDS(On): 125 Ohms

• Manufacturer: NXP USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23 (TO-236AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Power - Max: 250mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
• Resistance - RDS(On): 40 Ohms

• Manufacturer: NTE Electronics, Inc