- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Microchip Technology
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- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Resistance - RDS(On): 85 Ohms
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F3-B
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V
- Power - Max: 125mW
- Current Drain (Id) - Max: 30 mA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 625mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Resistance - RDS(On): 100 Ohms
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- Manufacturer: Microchip Technology
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Power - Max: 1.8W
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: P-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
- Resistance - RDS(On): 300 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
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- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Power - Max: 1.8W
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: onsemi
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: 174DFN
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
- Resistance - RDS(On): 85 Ohms
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- Manufacturer: Microchip Technology
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V (VGS)
- Power - Max: 360mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Current Drain (Id) - Max: 250 pA
- Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
- Resistance - RDS(On): 25 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CPH
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V
- Current Drain (Id) - Max: 50 mA
- Voltage - Cutoff (VGS off) @ Id: 1.8V @ 100µA
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- Manufacturer: NXP USA Inc.
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- Offers in stock:
- 10
- 15
- 50
- 100