Found: 23
  • SMALL SIGNAL N-CHANNEL JFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 4V @ 10nA
    • Resistance - RDS(On): 30 Ohms
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  • JFET N-CH 30V 0.225W SOT23-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
    • Resistance - RDS(On): 100 Ohms
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 25V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
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  • JFET N-CH 225MW SOT23
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
    • Power - Max: 225mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA
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  • SMALL SIGNAL N-CHANNEL MOSFET
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
    • Power - Max: 225mW
    • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
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  • JFET N-CH 40V 350MW SOT23
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • Power - Max: 350mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 800mV @ 1µA
    • Resistance - RDS(On): 60 Ohms
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  • JFET P-CH 30V 0.225W SOT23-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: P-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
    • Resistance - RDS(On): 300 Ohms
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  • TRANS JFET P-CH SOT23
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: P-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
    • Power - Max: 225mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
    • Resistance - RDS(On): 300 Ohms
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