Transistors - JFETs max power 500mW | Transistors

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Found: 44

U291

JFET N-CH 30V 0.5W TO-206AC

Vishay Siliconix
- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
- Resistance - RDS(On): 7 Ohms
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U290

JFET N-CH 30V 0.5W TO-206AC

Vishay Siliconix
- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-206AC, TO-52-3 Metal Can
- Supplier Device Package: TO-206AC (TO-52)
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
- Resistance - RDS(On): 3 Ohms
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2N5116UB/TR

JFET

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 175 Ohms
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2N5115

IC JUNCTION FET P-CH TO-18

Central Semiconductor Corp
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
- Resistance - RDS(On): 100 Ohms
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MV2N5116

P CHANNEL JFET

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
- Resistance - RDS(On): 100 Ohms
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2N5116

P CHANNEL JFET

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 175 Ohms
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2N5116

P CHANNEL JFET

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 175 Ohms
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2N5114

P CHANNEL JFET

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
- Resistance - RDS(On): 75 Ohms
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U441

JFET 2N-CH 25V TO-71

Vishay Siliconix
- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-71-6
- FET Type: 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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2N5114UB

P CHANNEL JFET

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 90mA @ 18V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1nA
- Resistance - RDS(On): 75 Ohms
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2N5116UB

P CHANNEL JFET

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 175 Ohms
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U440

JFET DUAL P-CH 25V TO-71

Vishay Siliconix
- Manufacturer: Vishay Siliconix
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-71-6
- FET Type: 2 N-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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MQ2N5116

JFET P-CH 30V 0.5W TO18

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1mA
- Resistance - RDS(On): 175 Ohms
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MV2N5116

P CHANNEL JFET

Microchip Technology
- Manufacturer: Microchip Technology
- Series: Military, MIL-PRF-19500
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
- Power - Max: 500mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
- Resistance - RDS(On): 100 Ohms
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