• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 35V
• Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
• Resistance - RDS(On): 50 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
• Resistance - RDS(On): 250 Ohms

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
• Resistance - RDS(On): 30 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA
• Resistance - RDS(On): 60 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
• Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
• Resistance - RDS(On): 75 Ohms

• Manufacturer: Linear Integrated Systems, Inc.
• Series: J174
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 135°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Resistance - RDS(On): 85 Ohms

• Manufacturer: Linear Integrated Systems, Inc.
• Series: SST308
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Resistance - RDS(On): 35 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
• Resistance - RDS(On): 300 Ohms

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
• Resistance - RDS(On): 85 Ohms

• Manufacturer: Linear Integrated Systems, Inc.
• Series: SST4392
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: N-Channel
• Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Resistance - RDS(On): 60 Ohms

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 35V
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
• Resistance - RDS(On): 30 Ohms

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: N-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 25V
• Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
• Resistance - RDS(On): 8 Ohms

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: N-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 35V
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
• Resistance - RDS(On): 30 Ohms

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: N-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 40V
• Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 20V
• Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA

• Manufacturer: Linear Integrated Systems, Inc.
• Series: SST177
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 135°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: P-Channel
• Power - Max: 350mW
• Voltage - Breakdown (V(BR)GSS): 30V
• Resistance - RDS(On): 300 Ohms