- Power - Max
- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Vishay Siliconix
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92 (TO-226)
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: SST175
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: P-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Resistance - RDS(On): 125 Ohms
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- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Resistance - RDS(On): 60 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: J202
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 900µA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: P-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
- Resistance - RDS(On): 75 Ohms
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92 (TO-226)
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
- Resistance - RDS(On): 50 Ohms
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 20V
- Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 8V @ 10µA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: SST310
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Resistance - RDS(On): 35 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Resistance - RDS(On): 50 Ohms
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-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
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- Offers in stock:
- 10
- 15
- 50
- 100