- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Power - Max
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
- Power - Max: 625mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-VTFP
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 5V
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1.7V @ 1nA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 225mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Resistance - RDS(On): 50 Ohms
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 310mW
- Voltage - Breakdown (V(BR)GSS): 25V
- Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
- Resistance - RDS(On): 18 Ohms
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- Manufacturer: Rochester Electronics, LLC
Info from the market- Total warehouses:
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- Manufacturer: Rochester Electronics, LLC
Info from the market- Total warehouses:
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- Offers in stock:
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- Manufacturer: Rochester Electronics, LLC
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
- Resistance - RDS(On): 50 Ohms
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V (VGS)
- Power - Max: 225mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 4V @ 10nA
- Resistance - RDS(On): 30 Ohms
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SMCP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
Info from the market- Total warehouses:
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- Offers in stock:
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- 15
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- 100