- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
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- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FL
- Reverse Recovery Time (trr): 70ns
- Power - Max: 30W
- Input Type: Standard
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 300V, 10A, 5Ohm, 15V
- IGBT Type: Trench
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Switching Energy: 100µJ (on), 130µJ (off)
- Gate Charge: 13nC
- Td (on/off) @ 25°C: 30ns/42ns
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- Manufacturer: Infineon Technologies
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
- Reverse Recovery Time (trr): 170ns
- Power - Max: 455W
- Input Type: Standard
- Current - Collector (Ic) (Max): 140A
- Voltage - Collector Emitter Breakdown (Max): 650V
- Test Condition: 400V, 75A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Pulsed (Icm): 300A
- Switching Energy: 2.5mJ (on), 2.2mJ (off)
- Gate Charge: 210nC
- Td (on/off) @ 25°C: 50ns/200ns
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- Manufacturer: STMicroelectronics
- Series: PowerMESH™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- Reverse Recovery Time (trr): 23.5ns
- Power - Max: 65W
- Input Type: Standard
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 390V, 3A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
- Current - Collector Pulsed (Icm): 30A
- Switching Energy: 55µJ (on), 85µJ (off)
- Gate Charge: 19nC
- Td (on/off) @ 25°C: 17ns/72ns
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- Power - Max: 310W
- Input Type: Standard
- Current - Collector (Ic) (Max): 40A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Test Condition: 600V, 25A, 10Ohm, 15V
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
- Current - Collector Pulsed (Icm): 75A
- Switching Energy: 4.8mJ (on), 1mJ (off)
- Gate Charge: 200nC
- Td (on/off) @ 25°C: 60ns/170ns
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP3
- Supplier Device Package: SP3
- Configuration: Half Bridge
- Power - Max: 750W
- Current - Collector (Ic) (Max): 290A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 250µA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
- Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: Renesas Electronics America Inc
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- Manufacturer: Infineon Technologies
- Series: PrimePack™2
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Half Bridge
- Power - Max: 3350W
- Current - Collector (Ic) (Max): 600A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 5mA
- Input: Standard
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
- Input Capacitance (Cies) @ Vce: 37nF @ 25V
- NTC Thermistor: Yes
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- Manufacturer: IXYS
- Series: HiPerFAST™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Reverse Recovery Time (trr): 190ns
- Power - Max: 300W
- Input Type: Standard
- Current - Collector (Ic) (Max): 64A
- Voltage - Collector Emitter Breakdown (Max): 900V
- Test Condition: 720V, 32A, 5Ohm, 15V
- IGBT Type: PT
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
- Current - Collector Pulsed (Icm): 200A
- Switching Energy: 2.2mJ (off)
- Gate Charge: 89nC
- Td (on/off) @ 25°C: 20ns/260ns
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- Manufacturer: International Rectifier
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power - Max: 370W
- Input Type: Standard
- Current - Collector (Ic) (Max): 78A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 400V, 30A, 10Ohm, 15V
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
- Current - Collector Pulsed (Icm): 120A
- Switching Energy: 350µJ (on), 825µJ (off)
- Gate Charge: 102nC
- Td (on/off) @ 25°C: 46ns/185ns
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Configuration: Single
- Power - Max: 1136W
- Current - Collector (Ic) (Max): 400A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector Cutoff (Max): 250µA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
- NTC Thermistor: No
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: Die
- Supplier Device Package: Die
- Input Type: Standard
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 300V, 6A, 54Ohm, 15V
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
- Current - Collector Pulsed (Icm): 18A
- Td (on/off) @ 25°C: 21ns/110ns
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Input Type: Standard
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 600V
- IGBT Type: NPT
- Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 4A
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- Manufacturer: Powerex Inc.
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: Module
- Configuration: Half Bridge
- Power - Max: 4050W
- Current - Collector (Ic) (Max): 600A
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector Cutoff (Max): 1mA
- Input: Standard
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 600A
- Input Capacitance (Cies) @ Vce: 60nF @ 10V
- NTC Thermistor: No
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
- Power - Max: 100W
- Input Type: Standard
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Test Condition: 400V, 6A, 23Ohm, 15V
- IGBT Type: Trench Field Stop
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Current - Collector Pulsed (Icm): 18A
- Switching Energy: 110µJ (on), 220µJ (off)
- Gate Charge: 48nC
- Td (on/off) @ 25°C: 12ns/127ns
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- 10
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- 100