• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
Found: 8948
  • IGBT 600V 20A 20.8W TO220FL
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220FL
    • Reverse Recovery Time (trr): 70ns
    • Power - Max: 30W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 20A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 300V, 10A, 5Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
    • Switching Energy: 100µJ (on), 130µJ (off)
    • Gate Charge: 13nC
    • Td (on/off) @ 25°C: 30ns/42ns
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  • IGBT 650V 140A 455W TO247AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AC
    • Reverse Recovery Time (trr): 170ns
    • Power - Max: 455W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 140A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 75A, 10Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Current - Collector Pulsed (Icm): 300A
    • Switching Energy: 2.5mJ (on), 2.2mJ (off)
    • Gate Charge: 210nC
    • Td (on/off) @ 25°C: 50ns/200ns
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  • IGBT 600V 15A 65W TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Reverse Recovery Time (trr): 23.5ns
    • Power - Max: 65W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 15A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 390V, 3A, 10Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
    • Current - Collector Pulsed (Icm): 30A
    • Switching Energy: 55µJ (on), 85µJ (off)
    • Gate Charge: 19nC
    • Td (on/off) @ 25°C: 17ns/72ns
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  • IGBT 1200V 40A 310W TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Power - Max: 310W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 40A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 25A, 10Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 75A
    • Switching Energy: 4.8mJ (on), 1mJ (off)
    • Gate Charge: 200nC
    • Td (on/off) @ 25°C: 60ns/170ns
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  • IGBT MODULE 600V 290A 750W SP3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Half Bridge
    • Power - Max: 750W
    • Current - Collector (Ic) (Max): 290A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
    • Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
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  • IGBT MOD 1200V 600A 3350W
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: PrimePack™2
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Half Bridge
    • Power - Max: 3350W
    • Current - Collector (Ic) (Max): 600A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
    • Input Capacitance (Cies) @ Vce: 37nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT 900V 64A 300W TO247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFAST™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD
    • Reverse Recovery Time (trr): 190ns
    • Power - Max: 300W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 64A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 720V, 32A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.2mJ (off)
    • Gate Charge: 89nC
    • Td (on/off) @ 25°C: 20ns/260ns
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  • IGBT, 75A I(C), 600V V(BR)CES, N
    International Rectifier
    • Manufacturer: International Rectifier
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Power - Max: 370W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 78A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 10Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 120A
    • Switching Energy: 350µJ (on), 825µJ (off)
    • Gate Charge: 102nC
    • Td (on/off) @ 25°C: 46ns/185ns
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  • IGBT, 400A, 600V, N-CHANNEL
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Configuration: Single
    • Power - Max: 1136W
    • Current - Collector (Ic) (Max): 400A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
    • NTC Thermistor: No
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  • LOW POWER EASY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • IGBT 3 CHIP 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 6A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 300V, 6A, 54Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
    • Current - Collector Pulsed (Icm): 18A
    • Td (on/off) @ 25°C: 21ns/110ns
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  • IGBT CHIP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 20A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 4A
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  • IGBT MOD 1200V 600A 4050W
    Powerex Inc.
    • Manufacturer: Powerex Inc.
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Half Bridge
    • Power - Max: 4050W
    • Current - Collector (Ic) (Max): 600A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 600A
    • Input Capacitance (Cies) @ Vce: 60nF @ 10V
    • NTC Thermistor: No
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  • IC DISCRETE 600V TO252-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3-313
    • Power - Max: 100W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 12A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 6A, 23Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
    • Current - Collector Pulsed (Icm): 18A
    • Switching Energy: 110µJ (on), 220µJ (off)
    • Gate Charge: 48nC
    • Td (on/off) @ 25°C: 12ns/127ns
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