- Supplier Device Package
- Manufacturer
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Power - Max: 1.1W
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-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.3W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
- Power - Max: 3.1W
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-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.3W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.3W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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-
- Manufacturer: Vishay Siliconix
- Series: LITTLE FOOT®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
- Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Power - Max: 1.1W
Info from the market- Total warehouses:
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-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
- Power - Max: 3.1W
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.3W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 4V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs (Max): ±5V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Vishay Siliconix
- Series: LITTLE FOOT®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Rds On (Max) @ Id, Vgs: 104mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.5W (Ta), 3.1W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Vishay Siliconix
- Series: TrenchFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Power - Max: 1.1W
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Vishay Siliconix
- Series: LITTLE FOOT®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
- Rds On (Max) @ Id, Vgs: 144mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.3W (Ta), 2.8W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Offers in stock:
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