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    • Current - Continuous Drain (Id) @ 25°C
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    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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List Table
Found: 102
  • SI5441BDC-T1-E3
    MOSFET P-CH 20V 4.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5475DDC-T1-GE3
    MOSFET P-CH 12V 6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 5.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5441BDC-T1-GE3
    MOSFET P-CH 20V 4.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5515DC-T1-GE3
    MOSFET N/P-CH 20V 4.4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5445BDC-T1-E3
    MOSFET P-CH 8V 5.2A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 8V
    • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5509DC-T1-E3
    MOSFET N/P-CH 20V 6.1A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
    • Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
    • Power - Max: 4.5W
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  • SI5475DC-T1-E3
    MOSFET P-CH 12V 5.5A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 5.5A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • SI5933CDC-T1-GE3
    MOSFET 2P-CH 20V 3.7A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3.7A
    • Rds On (Max) @ Id, Vgs: 144mOhm @ 2.5A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
    • Power - Max: 2.8W
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  • SI5402DC-T1-GE3
    MOSFET N-CH 30V 4.9A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SI5975DC-T1-GE3
    MOSFET 2P-CH 12V 3.1A CHIPFET
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 3.1A
    • Rds On (Max) @ Id, Vgs: 86mOhm @ 3.1A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
    • Power - Max: 1.1W
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  • SI5913DC-T1-E3
    MOSFET P-CH 20V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: LITTLE FOOT®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • FET Feature: Schottky Diode (Isolated)
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
    • Rds On (Max) @ Id, Vgs: 84mOhm @ 3.7A, 10V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • SI5461EDC-T1-E3
    MOSFET P-CH 20V 4.5A CHIPFET
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±12V
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  • SI5449DC-T1-E3
    MOSFET P-CH 30V 3.1A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 3.1A, 4.5V
    • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.3W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5414DC-T1-GE3
    MOSFET N-CH 20V 6A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
    • Vgs(th) (Max) @ Id: 1.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • SI5935CDC-T1-GE3
    MOSFET 2P-CH 20V 4A 1206-8
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SMD, Flat Lead
    • Supplier Device Package: 1206-8 ChipFET™
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4A
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
    • Power - Max: 3.1W
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