- Power - Output
- Manufacturer
- Supplier Device Package
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Rochester Electronics, LLC
- Package / Case: NI-360HF
- Supplier Device Package: NI-360HF
- Frequency: 3.55GHz
- Voltage - Rated: 15V
- Current - Test: 180mA
- Power - Output: 10W
- Transistor Type: pHEMT FET
- Gain: 10dB
- Voltage - Test: 12V
-
- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440196
- Supplier Device Package: 440196
- Frequency: 8GHz
- Voltage - Rated: 120V
- Current - Test: 200mA
- Power - Output: 10W
- Transistor Type: HEMT
- Gain: 16.7dB
- Voltage - Test: 28V
-
- Manufacturer: NXP USA Inc.
- Package / Case: TO-270-2
- Supplier Device Package: TO-270-2
- Frequency: 880MHz
- Voltage - Rated: 68V
- Current - Test: 350mA
- Power - Output: 10W
- Transistor Type: LDMOS
- Gain: 22.7dB
- Voltage - Test: 28V
-
- Manufacturer: NXP USA Inc.
- Package / Case: NI-200Z
- Supplier Device Package: NI-200Z
- Frequency: 2GHz
- Voltage - Rated: 65V
- Current - Test: 75mA
- Power - Output: 10W
- Transistor Type: LDMOS
- Gain: 11.5dB
- Voltage - Test: 26V
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