• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP4
• Supplier Device Package: SP4
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
• Power - Max: 156W

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23 (TO-236AB)
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
• Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 360mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
• Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
• Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Series: TinyFET®
• Operating Temperature: -55°C ~ 150°C (TJ)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 16V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 568mW (Ta)

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: TO-243AA (SOT-89)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
• Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.6W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
• Vgs(th) (Max) @ Id: 5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
• Power - Max: 1250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6-P
• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C: 22A
• Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Power - Max: 390W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3F
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id: 2.4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
• Power - Max: 690W (Tc)

• Manufacturer: Microchip Technology
• Series: CoolMOS™
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP1
• Supplier Device Package: SP1
• FET Type: 2 N Channel (Dual Buck Chopper)
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Power - Max: 250W

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
• Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 360mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP3F
• FET Type: 4 N-Channel
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id: 2.7V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
• Power - Max: 245W (Tc)

• Manufacturer: Microchip Technology
• Series: POWER MOS 7®
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 4 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 34A
• Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
• Power - Max: 780W

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
• Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 740mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V