• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 28mOhm @ 75A, 10V
• Vgs(th) (Max) @ Id: 5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
• Power - Max: 1250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 317A
• Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
• Power - Max: 1136W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
• Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
• Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
• Power - Max: 2.4kW (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4A, 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1885pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 290W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±30V

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
• Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
• Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 740mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: TO-243AA (SOT-89)
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 630mA (Tj)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 20V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.6W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP6
• Supplier Device Package: SP6
• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 300A
• Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
• Vgs(th) (Max) @ Id: 5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
• Power - Max: 1250W

• Manufacturer: Microchip Technology
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 175°C (TJ)
• Package / Case: Module
• Supplier Device Package: SP6C LI
• FET Type: 2 N Channel (Phase Leg)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 388A (Tc)
• Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
• Vgs(th) (Max) @ Id: 4V @ 90mA
• Gate Charge (Qg) (Max) @ Vgs: 966nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 16700pF @ 1000V
• Power - Max: 1754W (Tc)

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V

• Manufacturer: Microchip Technology
• Package / Case: Die
• Supplier Device Package: Die
• Frequency: 40.7MHz
• Voltage - Rated: 500V
• Power - Output: 750W
• Transistor Type: 4 N-Channel
• Gain: 15dB
• Voltage - Test: 380V
• Current Rating (Amps): 20A

• Manufacturer: Microchip Technology
• Series: CoolMOS™
• Mounting Type: Chassis Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: SP3
• Supplier Device Package: SP3
• FET Type: 2 N-Channel (Dual) Asymmetrical
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 95A
• Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
• Power - Max: 462W

• Manufacturer: Microchip Technology
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC
• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 240V
• Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V

• Manufacturer: Microchip Technology
• Package / Case: TO-247-3
• Supplier Device Package: TO-247
• Frequency: 65MHz
• Voltage - Rated: 1000V
• Power - Output: 150W
• Transistor Type: N-Channel
• Gain: 15dB
• Voltage - Test: 50V
• Current Rating (Amps): 25µA

• Manufacturer: Microchip Technology
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
• Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 740mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V