• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
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    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 472
  • VN10KN3-G-P013
    MOSFET N-CH 60V 310MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
    • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±30V
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  • MSCSM120HM31CT3AG
    PM-MOSFET-SIC-SBD~-SP3F
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP3F
    • FET Type: 4 N-Channel
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
    • Power - Max: 395W (Tc)
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  • MSCSM120AM042CD3AG
    PM-MOSFET-SIC-SBD~-D3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: D3
    • FET Type: 2 N Channel (Phase Leg)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 6mA
    • Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
    • Power - Max: 2.031kW (Tc)
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  • APTM50HM38FG
    MOSFET 4N-CH 500V 90A SP6
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 90A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
    • Power - Max: 694W
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  • DN3135K1-G
    MOSFET N-CH 350V 72MA SOT23-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 350V
    • Current - Continuous Drain (Id) @ 25°C: 72mA (Tj)
    • Rds On (Max) @ Id, Vgs: 35Ohm @ 150mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • VP2450N3-G
    MOSFET P-CH 500V 0.1A TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
    • Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 740mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • APTMC120AM55CT1AG
    MOSFET 2N-CH 1200V 55A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
    • Power - Max: 250W
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  • APTC60AM45B1G
    MOSFET 3N-CH 600V 49A SP1
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP1
    • Supplier Device Package: SP1
    • FET Type: 3 N Channel (Phase Leg + Boost Chopper)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 49A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Power - Max: 250W
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  • MSCSM120TAM11CTPAG
    PM-MOSFET-SIC-SBD~-SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
    • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
    • Power - Max: 1.042kW (Tc)
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  • LND150N3-G
    MOSFET N-CH 500V 30MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
    • Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 740mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • TN0610N3-G-P013
    MOSFET N-CH 100V 500MA TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
    • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
    • Vgs(th) (Max) @ Id: 2V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
    • Vgs (Max): ±20V
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  • 2N7008-G
    MOSFET N-CH 60V 0.23A TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
    • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±30V
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  • VP0550N3-G
    MOSFET P-CH 500V 0.054A TO92-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
    • Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
    • Vgs (Max): ±20V
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  • DN3525N8-G
    MOSFET N-CH 250V 360MA SOT89-3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-243AA
    • Supplier Device Package: TO-243AA (SOT-89)
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
    • Rds On (Max) @ Id, Vgs: 6Ohm @ 200mA, 0V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.6W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • APTM100H45SCTG
    MOSFET 4N-CH 1000V 18A SP4
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • FET Type: 4 N-Channel (Half Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 18A
    • Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
    • Power - Max: 357W
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