• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
Found: 168
  • P-CHANNEL MOSFET, DFN2020-6G PAC
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 6-WDFN Exposed Pad
    • Supplier Device Package: DFN2020-6G
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 16V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±8V
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  • N-CHANNEL MOSFET, SOT-23 PACKAGE
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
    • Rds On (Max) @ Id, Vgs: 125mOhm @ 3A, 4.5V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL,MOSFETS,DPAK PACKAGE
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 20A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • P-CHANNEL MOSFET, SOT-523 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-523
    • Supplier Device Package: SOT-523
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 660mA
    • Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.1V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 6V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150mW
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V
    • Vgs (Max): ±12V
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  • N-CHANNEL MOSFET, DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 50A
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 75W
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL,MOSFETS,SOT-23 PACKAGE
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5.8A
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 1.155nF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400mW
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • N-CHANNEL,MOSFETS,DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 85W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 20V 3A SOT-23
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
    • Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.25W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±8V
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  • MCQ3779-TP
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOP
    • FET Type: N and P-Channel
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 3.4A, 4A
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V, 1055pF @ 25V
    • Power - Max: 2W
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  • MOSFET N-CH 60V 340MA SOT-23-3
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
    • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 1V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL MOSFET, DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 80A
    • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 101.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6124pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 85W
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CHANNEL 30V 5A SOT23
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5A
    • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±10V
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  • MOSFET 2 P-CH 30V 5A 8SOP
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 5A
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Power - Max: 2.5W
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  • N-CHANNEL MOSFET, DPAK PACKAGE
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 52.8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 45W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOP
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
    • Power - Max: 1.25W (Ta)
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