- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: DFN2020-6L
- FET Type: 2 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
- Power - Max: 1.4W
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6L
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A, 4A
- Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 12nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF, 405pF @ 8V, 10V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-WFDFN Exposed Pad
- Supplier Device Package: DFN2030-6
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: DFN3030
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 25W
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 200mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
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- Manufacturer: Micro Commercial Co
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- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 660mA
- Rds On (Max) @ Id, Vgs: 500mOhm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 16V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 100mW
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±12V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 85W
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.25W
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±10V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
- FET Type: N and P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
- Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
- Power - Max: 1.4W
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 30V
- Power - Max: 3.1W
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A
- Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.6A
- Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 901pF @ 50V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 31.3W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- 10
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- 50
- 100