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List Table
Found: 2430
  • IXTP140P05T
    MOSFET P-CH 50V 140A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 50V
    • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 298W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFX210N17T
    MOSFET N-CH 170V 210A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 170V
    • Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFA130N15X3
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AA
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 390W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFT74N20
    MOSFET N-CH 200V 74A TO-268
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    • Supplier Device Package: TO-268
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFQ14N80P
    MOSFET N-CH 800V 14A TO-3P
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • FMM50-025TF
    MOSFET 2N-CH 250V 30A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 30A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
    • Power - Max: 125W
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  • IXTH13N110
    MOSFET N-CH 1.1KV 13A TO-247AD
    IXYS
    • Manufacturer: IXYS
    • Series: MegaMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXTH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1100V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 920mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5650pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFB210N30P3
    MOSFET N-CH 300V 210A PLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: PLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1890W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH16N120P
    MOSFET N-CH 1200V 16A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 660W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR80N15Q
    MOSFET N-CH 150V 75A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 310W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFE48N50QD3
    MOSFET N-CH 500V 41A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MTC120WX75GD-SMD
    IGBT MOD MOSFET SIXPACK ISOPLUS
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS-DIL™
    • Supplier Device Package: ISOPLUS-DIL™
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
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  • IXTN660N04T4
    40V/660A TRENCHT4 PWR MOSFET SOT
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT4™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • FET Feature: Current Sensing
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 860nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1040W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFV30N60PS
    MOSFET N-CH 600V 30A PLUS220-SMD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: PLUS-220SMD
    • Supplier Device Package: PLUS-220SMD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFB82N60P
    MOSFET N-CH 600V 82A PLUS 264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: PLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
    • Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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