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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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    • Vgs (Max)
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List Table
Found: 2430
  • IXKT70N60C5-TRL
    MOSFET P-CH 600V 68A TO-268
    IXYS
    • Manufacturer: IXYS
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  • IXTP90N055T
    MOSFET N-CH 55V 90A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 176W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN24N90Q
    MOSFET N-CH 900V 24A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
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  • IXTP230N04T4M
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT4™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFJ32N50
    MOSFET N-CH TO-220
    IXYS
    • Manufacturer: IXYS
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  • IXFN200N07
    MOSFET N-CH 70V 200A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 70V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTA4N150HV-TRL
    IXTA4N150HV TRL
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263HV
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1500V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
    • Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 280W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • GWM180-004X2-SMD
    MOSFET 6N-CH 40V 180A 17-SMD
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 17-SMD, Gull Wing
    • Supplier Device Package: ISOPLUS-DIL™
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 180A
    • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
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  • IXTT440N04T4HV
    40V/440A TRENCHT4 PWR MOSFET TO-
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT4™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    • Supplier Device Package: TO-268
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 940W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXTY8N65X2
    MOSFET N-CH 650V 8A X2 TO-252
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTH160N10T
    MOSFET N-CH 100V 160A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXTH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 430W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFK73N30
    MOSFET N-CH 300V 73A TO-264AA
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264AA (IXFK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFK55N50
    MOSFET N-CH 500V 55A TO-264AA
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264AA (IXFK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTK17N120L
    MOSFET N-CH 1200V 17A TO-264
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264 (IXTK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
    • Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): ±30V
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  • IXTM9226
    POWER MOSFET TO-3
    IXYS
    • Manufacturer: IXYS
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