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  • Voltage - Rated
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    • Power Dissipation (Max)
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    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2430
  • IXFT120N15P
    MOSFET N-CH 150V 120A TO-268
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™ HiPerFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    • Supplier Device Package: TO-268
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 600W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN50N80Q2
    MOSFET N-CH 800V 50A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1135W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFV12N80P
    MOSFET N-CH 800V 12A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP270N04T4
    MOSFET N-CH 40V 270A
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT4™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9140pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFX100N25
    MOSFET N-CH 250V 100A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 560W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTH14N100
    MOSFET N-CH 1000V 14A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: MegaMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXTH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 820mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5650pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTH2N150L
    MOSFET N-CH 1500V 2A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: Linear L2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1500V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
    • Rds On (Max) @ Id, Vgs: 15Ohm @ 1A, 20V
    • Vgs(th) (Max) @ Id: 8.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 290W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): ±30V
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  • IXTA98N075T7
    MOSFET N-CH 75V 98A TO-263-7
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
    • Supplier Device Package: TO-263-7 (IXTA..7)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFK15N100Q
    MOSFET N-CH 1000V 15A TO-264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264AA (IXFK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFK44N50Q
    MOSFET N-CH 500V 44A TO-264AA
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264AA (IXFK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
    • Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXKP24N60C5
    MOSFET N-CH 600V 24A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 790µA
    • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTA180N055T
    MOSFET N-CH 55V 180A TO-263
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (IXTA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Technology: MOSFET (Metal Oxide)
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  • IXTL2N470
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 4700V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
    • Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 220W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP18N60PM
    MOSFET N-CH TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 90W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTA62N25T
    MOSFET N-CH 250V 62A TO-263
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (IXTA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
    • Technology: MOSFET (Metal Oxide)
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