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    • Voltage - Test
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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 2430
  • IXFH140N20X3
    200V/140A ULTRA JUNCTION X3-CLAS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR9N80Q
    MOSFET N-CH 800V ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Technology: MOSFET (Metal Oxide)
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  • IXTA48P05T
    MOSFET P-CH 50V 48A TO-263
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchP™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (IXTA)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 50V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFH20N85X
    850V/20A ULTRA JUNCTION X-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 540W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH14N60P3
    MOSFET N-CH 600V 14A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 327W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFX180N15P
    MOSFET N-CH 150V 180A PLUS 247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFE44N60
    MOSFET N-CH 600V 41A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFL40N110P
    MOSFET N-CH 1100V 21A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1100V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP1N120P
    MOSFET N-CH 1200V 1A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarVHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
    • Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 63W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP170N075T2
    MOSFET N-CH 75V 170A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFT30N50
    MOSFET N-CH 500V 30A TO-268
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    • Supplier Device Package: TO-268
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTA50N25T-TRL
    IXTA50N25T TRL
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (IXTA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH21N50Q
    MOSFET N-CH 500V 21A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 280W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP06N120P
    MOSFET N-CH 1200V 600MA TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarVHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
    • Rds On (Max) @ Id, Vgs: 32Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 42W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP3N120
    MOSFET N-CH 1.2KV 3A TO-220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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