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    • Current - Continuous Drain (Id) @ 25°C
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    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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List Table
Found: 2430
  • IXFH10N80P
    MOSFET N-CH 800V 10A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTX90N25L2
    MOSFET N-CH 250V 90A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: Linear L2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 960W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP90N20X3M
    200V/90A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFA180N10T2-TRL
    IXFA180N10T2 TRL
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (IXFA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 480W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFK48N60Q3
    MOSFET N-CH 600V 48A TO-264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264AA (IXFK)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 140mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1000W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH67N10Q
    MOSFET N-CH 100V 67A TO247AD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTM1712
    POWER MOSFET TO-3
    IXYS
    • Manufacturer: IXYS
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  • IXFH26N100X
    MOSFET 1KV 26A ULTRA JCT TO247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 6V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 860W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTA90N055T
    MOSFET N-CH 55V 90A TO-263
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (IXTA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 176W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX80N50Q3
    MOSFET N-CH 500V 80A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN26N120P
    MOSFET N-CH 1200V 23A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 460mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 695W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTR48P20P
    MOSFET P-CH 200V 30A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 190W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN140N20P
    MOSFET N-CH 200V 115A SOT227B
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 680W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
    • Vgs (Max): ±20V
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  • IXTA64N10L2
    N-CHANNEL: LINEAR POWER MOSFETS
    IXYS
    • Manufacturer: IXYS
    • Series: Linear L2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AA
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 357W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFK50N85X
    850V/50A ULTRA JUNCTION X-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 890W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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