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    • Rds On (Max) @ Id, Vgs
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List Table
Found: 7734
  • IRLR7811WCPBF
    MOSFET N-CH 30V 64A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
    • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 71W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±12V
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  • IRL3502SPBF
    MOSFET N-CH 20V 110A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 140W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
    • Vgs (Max): ±10V
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  • IAUT300N10S5N015ATMA1
    100V 300A 1.5MOHM TOLL
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™-5
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerSFN
    • Supplier Device Package: PG-HSOF-8-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 275µA
    • Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 16011pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IPN70R1K0CEATMA1
    MOSFET N-CH 750V 7.4A SOT223
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-261-3
    • Supplier Device Package: PG-SOT223
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 750V
    • Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF3711STRLPBF
    MOSFET N-CH 20V 110A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • BUZ31L H
    MOSFET N-CH 200V 13.5A TO220-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V
    • Vgs(th) (Max) @ Id: 2V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 95W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): ±20V
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  • IRF7739L1TRPBF
    MOSFET N-CH 40V 46A DIRECTFETL8
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric L8
    • Supplier Device Package: DIRECTFET L8
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
    • Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRLI2910PBF
    MOSFET N-CH 100V 31A TO220FP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220AB Full-Pak
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
    • Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 63W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
    • Vgs (Max): ±16V
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  • IPG15N06S3L-45
    MOSFET 2N-CH 55V 15A TDSON-8
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: PG-TDSON-8-4
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 15A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 10µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
    • Power - Max: 21W
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  • IRF6709S2TRPBF
    MOSFET N-CH 25V 12A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7492
    MOSFET N-CH 200V 3.7A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS33N15DTRLP
    MOSFET N-CH 150V 33A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
    • Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IRFR3103TRL
    MOSFET N-CH 400V 1.7A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 400V
    • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFZ46NS
    MOSFET N-CH 55V 53A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
    • Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF1902PBF
    MOSFET N-CH 20V 4.2A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
    • Vgs (Max): ±12V
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