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    • Voltage - Test
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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 7734
  • IRF200P222
    MOSFET N-CH 200V 182A TO247AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: StrongIRFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AC
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 82A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 270µA
    • Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9820pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 556W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL520NSTRR
    MOSFET N-CH 100V 10A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
    • Vgs (Max): ±16V
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  • IPW65R280C6FKSA1
    MOSFET N-CH 650V 13.8A TO247
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 440µA
    • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB038N12N3GATMA1
    MOSFET N-CH 120V 120A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 120V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 270µA
    • Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFC4127ED
    MOSFET N-CH WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • BSS84PW L6327
    MOSFET P-CH 60V 150MA SOT-323
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
    • Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
    • Vgs(th) (Max) @ Id: 2V @ 20µA
    • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19.1pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH4234TRPBF
    MOSFET N-CH 25V 22A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
    • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
    • Vgs(th) (Max) @ Id: 2.1V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF3707L
    MOSFET N-CH 30V 62A TO-262
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 87W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPB80R290C3AATMA1
    MOSFET P-CH TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • IRFU3710ZPBF
    MOSFET N-CH 100V 42A I-PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: IPAK (TO-251)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 140W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFS5615PBF
    MOSFET N-CH 150V 33A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
    • Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 144W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPI80N06S207AKSA2
    MOSFET N-CH 55V 80A TO262-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: PG-TO262-3-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 180µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFZ48NSTRRPBF
    MOSFET N-CH 55V 64A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
    • Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPI90R800C3
    MOSFET N-CH 900V 6.9A TO262-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: PG-TO262-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
    • Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 460µA
    • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPB120N06S403ATMA1
    MOSFET N-CH 60V 120A TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-3-2
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 120µA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 167W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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