- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Infineon Technologies
- Series: OptiMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-251-3 Stub Leads, IPak
- Supplier Device Package: PG-TO251-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 115W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: FETKY™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 110W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: IPAK (TO-251)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 40W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: OptiMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: PG-TO262-3-1
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 215W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: OptiMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9430pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: CoolMOS™ C7
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 101W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Package / Case: SOT-143R
- Supplier Device Package: PG-SOT-143R-3D
- Frequency: 800MHz
- Voltage - Rated: 8V
- Transistor Type: N-Channel
- Gain: 22dB
- Voltage - Test: 5V
- Noise Figure: 1.6dB
- Current Rating (Amps): 25mA
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 140W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100