- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
- Power - Max: 2W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-262-3 Full Pack, I²Pak
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 28W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 85A (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: SDMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 42A (Tc)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 50V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.92W (Ta), 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs (Max): ±25V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 268W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±16V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-DFN-EP (2x2)
- FET Type: P-Channel
- FET Feature: Schottky Diode (Isolated)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.8W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-DFN (2.9x2.3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
- Power - Max: 2W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Package / Case: 8-PowerSMD, Flat Leads
- Supplier Device Package: 8-DFN (5x6)
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: 10-AlphaDFN (2.98x1.49)
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
- Power - Max: 3.1W (Ta)
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN-EP (3x3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 5W (Ta), 28W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -50°C ~ 150°C (TJ)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TO-251-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 56.8W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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