- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
- Power - Max: 2W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (3x3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 39A (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: AlphaSGT™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: 8-PowerSFN
- Supplier Device Package: TOLLA
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 400A (Tc)
- Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19180pF @ 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 8.3W (Ta), 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (3x3)
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
- Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3607pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 463W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
- Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 50V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 650mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.4W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.3W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 83W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: AlphaMOS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
- Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-DFN-EP (3.3x3.3)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4.2W (Ta), 42W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: aMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 198W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
- Power - Max: 2W
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- Manufacturer: Alpha & Omega Semiconductor Inc.
- Series: SDMOS™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 734pF @ 12.5V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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