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    • Current - Continuous Drain (Id) @ 25°C
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    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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List Table
Found: 1816
  • AOD2610E
    MOSFET N-CH 60V 46A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
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  • AO3415B
    MOSFET 2P-CH 30V 6A 8-SOIC
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
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  • AOD5N50
    MOSFET N-CH 500V 5A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -50°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • AOWF10N60
    MOSFET N-CH 600V 10A TO262F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-262-3 Full Pack, I²Pak
    • Supplier Device Package: TO-262F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • AOI516_001
    MOSFET N-CH 30V 18A
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-251-3 Stub Leads, IPak
    • Supplier Device Package: TO-251B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • AOB480L
    MOSFET N-CH 80V D2PAK
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: SDMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (D²Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
    • Vgs (Max): ±25V
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  • AO5401E
    MOSFET P-CH 20V 0.5A SC89-3L
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-89, SOT-490
    • Supplier Device Package: SC-89-3
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
    • Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 4.5V
    • Vgs(th) (Max) @ Id: 900mV @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 280mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • AOB15S65L
    MOSFET N-CH 650V 15A TO263
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: aMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (D²Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 208W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • AOL1418
    MOSFET N-CH 30V 85A 8ULTRASO
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 3-PowerSMD, Flat Leads
    • Supplier Device Package: UltraSO-8™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • AOTF240L
    MOSFET N-CH 40V 20A TO220F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220-3F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.9W (Ta), 41W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • AOT2916L
    MOSFET N CH 100V 5A TO220
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 2.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • AOD450
    MOSFET N-CH 200V 3.8A TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252, (D-Pak)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
    • Rds On (Max) @ Id, Vgs: 700mOhm @ 3.8A, 15V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 3.82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • AOTF42S60L
    MOSFET N-CH 600V 39A TO220F
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: aMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220-3F
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2154pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 37.9W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • AON7418A
    MOSFET N-CHANNEL 30V 50A 8DFN
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerWDFN
    • Supplier Device Package: 8-DFN-EP (3.3x3.3)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2994pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • AO4452
    MOSFET N-CH 100V 8A 8SOIC
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: SDMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SOIC
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
    • Vgs (Max): ±25V
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