Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Found: 6217

DDTA115TUA-7-F

TRANS PREBIAS PNP 200MW SOT323

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 100kOhms
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NSBA144EDXV6T5G

TRANS PREBIAS PNP DL 50V SOT563

onsemi
- Manufacturer: onsemi
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UP0411100L

TRANS PREBIAS DUAL PNP SSMINI6

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SSMINI6-F1
- Power - Max: 125mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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FJNS3206RBU

TRANS PREBIAS NPN 300MW TO92S

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
- Power - Max: 300mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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BCR555E6433HTMA1

TRANS PREBIAS PNP 300MW SOT23-3

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 330mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 10kOhms
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DTC143XEFRATL

NPN DIGITAL TRANSISTOR (CORRESPO

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 10kOhms
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ADTA144ECAQ-13

PREBIAS TRANSISTOR SOT23

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 310mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DDTC125TKA-7-F

TRANS PREBIAS NPN 200MW SC59-3

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 200 kOhms
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BCR135WH6327XTSA1

TRANS PREBIAS NPN 250MW SOT323-3

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DTC114YUBHZGTL

NPN DIGITAL TRANSISTOR (WITH BUI

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DTC123YKAT146

TRANS PREBIAS NPN 200MW SMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 10kOhms
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DTA114TEBTL

TRANS PREBIAS PNP 150MW EMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
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RN2106(T5L,F,T)

TRANS PREBIAS PNP 50V 0.1A SSM

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
- Power - Max: 100mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DTC043EUBTL

TRANS PREBIAS NPN 50V UMT3F

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
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FJY4009R

SMALL SIGNAL BIPOLAR TRANSISTOR

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SOT-523F
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 4.7kOhms
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