Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Transistors

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Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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Found: 6217

RN2109MFV,L3F

TRANS PREBIAS PNP 50V 0.1A VESM

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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PDTC114EQCZ

PDTC114EQC/SOT8009/DFN1412D-3

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
- Power - Max: 360mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
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MUN5114DW1T1G

TRANS PREBIAS 2PNP 50V SC88

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Power - Max: 250mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PEMB1,115

NOW NEXPERIA PEMB1 - SMALL SIGNA

NXP USA Inc.
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
- Power - Max: 300mW
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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DTB113ECT116

PNP -500MA/-50V DIGITAL TRANSIST

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
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DTC123JEBMGTL

TRANS NPN 100MA 50V SC-89

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Series: DTC123J
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTC114YQAZ

PDTC143X/123J/143Z/114YQA SERIES

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
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PUMD20,115

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Nexperia USA Inc.
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
- Power - Max: 300mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
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DMC964020R

TRANS PREBIAS DUAL NPN SSMINI6

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SSMini6-F3-B
- Power - Max: 125mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
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UNR31A500L

TRANS PREBIAS PNP 100MW SSSMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
- Power - Max: 100mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Resistor - Base (R1): 10kOhms
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NSVB123JPDXV6T1G

SMALL SIGNAL BIPOLAR TRANSISTOR

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
- Power - Max: 500mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
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RN1105ACT(TPL3)

TRANS PREBIAS NPN 50V 0.08A CST3

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
- Power - Max: 100mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
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DDTA113ZCA-7

TRANS PREBIAS PNP 200MW SOT23-3

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
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DRC3144G0L

TRANS PREBIAS NPN 100MW SSSMINI3

Panasonic Electronic Components
- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2-B
- Power - Max: 100mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Resistor - Emitter Base (R2): 47kOhms
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DTA124TETL

TRANS PREBIAS PNP 150MW EMT3

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
- Power - Max: 150mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 22kOhms
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