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List Table
Found: 250
  • PDTA124XK,115
    TRANS PREBIAS PNP 250MW SMT3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3; MPAK
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 22kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PEMB10115
    PNP/PNP RESISTOR-EQUIPPED TRANSI
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Package / Case: SOT-563, SOT-666
    • Supplier Device Package: SOT-666
    • Power - Max: 300mW
    • Transistor Type: 2 PNP Pre-Biased (Dual)
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC114TK,115
    TRANS PREBIAS NPN 250MW SMT3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3; MPAK
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 10kOhms
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  • PDTC144EK,115
    TRANS PREBIAS NPN 250MW SMT3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3; MPAK
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 47kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA123TK,115
    TRANS PREBIAS PNP 250MW SMT3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3; MPAK
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
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  • PDTC115TS,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 100kOhms
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  • PDTA114YK,115
    TRANS PREBIAS PNP 250MW SMT3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3; MPAK
    • Power - Max: 250mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTA144TS,126
    TRANS PREBIAS PNP 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 47kOhms
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  • PDTD123YS,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTA123YS,126
    TRANS PREBIAS PNP 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTC114YK,115
    TRANS PREBIAS NPN 250MW SMT3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SMT3; MPAK
    • Power - Max: 250mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 10kOhms
    • Resistor - Emitter Base (R2): 47kOhms
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  • PDTC114EE,115-NXP
    0.1A, 50V, NPN, SC-75
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
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  • PDTA143TS,126
    TRANS PREBIAS PNP 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP - Pre-Biased
    • Current - Collector (Ic) (Max): 100mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
    • Current - Collector Cutoff (Max): 1µA
    • Resistor - Base (R1): 4.7kOhms
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  • PBRN123YS,126
    TRANS PREBIAS NPN 0.7W TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 700mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 800mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 10kOhms
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  • PDTD123ES,126
    TRANS PREBIAS NPN 500MW TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN - Pre-Biased
    • Current - Collector (Ic) (Max): 500mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 500nA
    • Resistor - Base (R1): 2.2kOhms
    • Resistor - Emitter Base (R2): 2.2kOhms
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