Transistors - Bipolar (BJT) - Arrays, Pre-Biased NXP Semiconductors | Transistors

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Found: 33

PDTC124XM,315

NOW NEXPERIA PDTC124XM - SMALL S

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTC144TM,315

NEXPERIA PDTC144 - NPN RESISTOR-

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PEMD48,115

NOW NEXPERIA PEMD48 - SMALL SIGN

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
- Power - Max: 300mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms, 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTD123YQAZ

NEXPERIA PDTD123 - 50 V, 500MA N

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PBLS6004D,115

NEXPERIA PBLS6004D - SMALL SIGNA

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PBLS1503Y,115

NEXPERIA PBLS1503Y - SMALL SIGNA

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PQMD10147

PQMD10 - NPN/PNP RESISTOR-EQUIPP

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PEMH13,315

NOW NEXPERIA PEMH13 - SMALL SIGN

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
- Power - Max: 300mW
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTA123YM,315

NOW NEXPERIA PDTA123YM - SMALL S

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 10kOhms
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PQMD16147

PQMD16 - NPN/PNP RESISTOR-EQUIPP

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PBLS1504Y,115

NEXPERIA PBLS1504Y - 15 V PNP BI

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PDTC124XMB,315

SMALL SIGNAL BIPOLAR TRANSISTOR,

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PBLS4003D,115

NEXPERIA PBLS4003D - SMALL SIGNA

NXP Semiconductors
- Manufacturer: NXP Semiconductors
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PBLS6005D,115

NOW NEXPERIA PBLS6005D - SMALL S

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
- Power - Max: 600mW
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 700mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 500mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 185MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
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PDTC123EMB,315

NOW NEXPERIA PDTC123EMB - SMALL

NXP Semiconductors
- Manufacturer: NXP Semiconductors
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 2.2kOhms
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