- Current - Collector (Ic) (Max)
- Manufacturer
- Voltage - Collector Emitter Breakdown (Max)
- Transistor Type
- Supplier Device Package
-
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Resistor - Emitter Base (R2)
- Package / Case
- Series
-
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Power - Max: 200mW
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 200mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-11
- Power - Max: 200mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-4
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
- Power - Max: 150mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
- Power - Max: 250mW
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Resistor - Base (R1): 47kOhms
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- Offers in stock:
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
- Power - Max: 250mW
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
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- Offers in stock:
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- 15
- 50
- 100