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- Driven Configuration
- Channel Type
- Number of Drivers
- Gate Type
- Logic Voltage - VIL, VIH
- Current - Peak Output (Source, Sink)
- High Side Voltage - Max (Bootstrap)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Вид монтажа
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Напряжение питания
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Рабочая температура
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Тип корпуса
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Входной каскад
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Rise / Fall Time (Typ)
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Driven Configuration
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Channel Type
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Number of Drivers
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Gate Type
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Logic Voltage - VIL, VIH
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Current - Peak Output (Source, Sink)
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High Side Voltage - Max (Bootstrap)
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Серия
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LTC1177IS-12 | IC GATE DRVR HIGH-SIDE 28SOIC | Analog Devices Inc. | 28-SOIC (0.295", 7.50mm Width) | Surface Mount | 11.4V ~ 12.6V | 28-SOIC | Non-Inverting | High-Side | 1 | ||||||||
MAX17601ATA+T | IC GATE DRVR LOW-SIDE 8TDFN | Analog Devices Inc./Maxim Integrated | 8-WDFN Exposed Pad | Surface Mount | 4V ~ 14V | -40°C ~ 150°C (TJ) | 8-TDFN (3x3) | Non-Inverting | 40ns, 25ns | Low-Side | Independent | 2 | N-Channel MOSFET | 0.8V, 2.1V | 4A, 4A | ||
FAN3213TMX | FULL BRIDGE BASED PERIPHERAL DRI | Fairchild Semiconductor | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | 4.5V ~ 18V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | 12ns, 9ns | Low-Side | Synchronous | 2 | N-Channel MOSFET | 0.8V, 2V | 5A, 5A | ||
IR21844PBF | IC GATE DRVR HALF-BRIDGE 14DIP | Infineon Technologies | 14-DIP (0.300", 7.62mm) | Through Hole | 10V ~ 20V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | 40ns, 20ns | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 1.9A, 2.3A | 600V | |
IR4426STR | IC GATE DRVR LOW-SIDE 8SOIC | Infineon Technologies | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | 6V ~ 20V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | 15ns, 10ns | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | ||
ISL2100AABZ | HALF BRIDGE BASED MOSFET DRIVER | Intersil | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | 9V ~ 14V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | 10ns, 10ns | Half-Bridge | Independent | 2 | N-Channel MOSFET | 3.7V, 7.4V | 2A, 2A | 114V | |
IXDF602SIA | IC GATE DRVR LOW-SIDE 8SOIC | IXYS Integrated Circuits Division | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | 4.5V ~ 35V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting, Non-Inverting | 7.5ns, 6.5ns | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | ||
MCP14E11-E/P | IC GATE DRVR LOW-SIDE 8DIP | Microchip Technology | 8-DIP (0.300", 7.62mm) | Through Hole | 4.5V ~ 18V | -40°C ~ 150°C (TJ) | 8-PDIP | Inverting, Non-Inverting | 25ns, 25ns | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | ||
MCP1404T-E/SN | IC GATE DRVR LOW-SIDE 8SOIC | Microchip Technology | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | 4.5V ~ 18V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | 15ns, 18ns | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4.5A, 4.5A | ||
MIC4606-2YTS-TR | IC GATE DRVR FULL-BRIDGE 16TSSOP | Microchip Technology | 16-TSSOP (0.173", 4.40mm Width) | Surface Mount | 5.25V ~ 16V | -40°C ~ 125°C (TJ) | 16-TSSOP | Non-Inverting | 20ns, 20ns | Full-Bridge | Synchronous | 4 | N-Channel MOSFET | 0.8V, 2.2V | 1A, 1A | 108V | |
MIC5013BM | IC GATE DRVR HI/LOW SIDE 8SOIC | Microchip Technology | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | 7V ~ 32V | -40°C ~ 85°C (TA) | 8-SOIC | Non-Inverting | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 2V, 4.5V | ||||
PCA9440HE-Q100Z | HALF BRIDGE W/ OPT DRIVER ACE-Q1 | NXP USA Inc. | 180-VFBGA | Surface Mount | 180-VFBGA (8x8) | Automotive, AEC-Q100 | |||||||||||
ISL89160FBEAZ-T | IC GATE DRVR LOW-SIDE 8SOIC | Renesas Electronics America Inc | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Surface Mount | 4.5V ~ 16V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | 20ns, 20ns | Low-Side | Independent | 2 | N-Channel MOSFET | 1.22V, 2.08V | 6A, 6A | ||
UC2708NE | BUFFER/INVERTER MOSFET DRIVER | Rochester Electronics, LLC | 16-DIP (0.300", 7.62mm) | Through Hole | 5V ~ 35V | -25°C ~ 85°C (TA) | 16-PDIP | Non-Inverting | 25ns, 25ns | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 0.8V, 2V | 3A, 3A | ||
BS2103F-E2 | IC GATE DRVR HALF-BRIDGE 8SOP | Rohm Semiconductor | 8-SOIC (0.173", 4.40mm Width) | Surface Mount | 10V ~ 18V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | 200ns, 100ns | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 1V, 2.6V | 60mA, 130mA | 600V |
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