Diodes - Rectifiers - Arrays | Diodes

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Found: 69821

SR104 A0G

DIODE SCHOTTKY 40V 1A DO204AL

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Operating Temperature - Junction: -55°C ~ 125°C
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FR104B-G

RECTIFIER FAST RECOVERY 400V 1A

Comchip Technology
- Manufacturer: Comchip Technology
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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S1KW80KA-5

DIODE GEN PURP 80KV 1.5A MODULE

Semtech Corporation
- Manufacturer: Semtech Corporation
- Mounting Type: Chassis Mount
- Package / Case: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80000V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 80V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1mA @ 80000V
- Operating Temperature - Junction: -55°C ~ 150°C
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MBRD1035CTLT4

DEVELOPMENT KITS/ACCESSORIES

Rochester Electronics, LLC
- Manufacturer: Rochester Electronics, LLC
- Series: SWITCHMODE™
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 2mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 5A
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MBRF10200

DIODE SCHOTTKY 200V 10A ITO220AC

SMC Diode Solutions
- Manufacturer: SMC Diode Solutions
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
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MUR160AHR1G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 27pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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UPS115U/TR7

DIODE SCHOTTKY 15V 1A POWERMITE

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10mA @ 15V
- Operating Temperature - Junction: -55°C ~ 150°C
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RSFJLHRVG

DIODE GEN PURP 600V 500MA SUBSMA

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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MBR30150CTHC0G

DIODE ARRAY SCHOTTKY 150V TO220

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 1.02V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 30A
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S1KFP

RECTIFIER DIODE, 1.2A, 800V

Fairchild Semiconductor
- Manufacturer: Fairchild Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 18pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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1N4948GPHE3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
- Manufacturer: Vishay General Semiconductor - Diodes Division
- Series: SUPERECTIFIER®
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 175°C
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ES1ALHRQG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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SBR10B45P5-7D

DIODE SBR 45V 10A POWERDI5

Diodes Incorporated
- Manufacturer: Diodes Incorporated
- Series: SBR®
- Mounting Type: Surface Mount
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 380µA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
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STTH5R06DJF-TR

DIODE GEN PURP 600V 5A POWERFLAT

STMicroelectronics
- Manufacturer: STMicroelectronics
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat™ (5x6)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55ns
- Current - Reverse Leakage @ Vr: 60µA @ 600V
- Operating Temperature - Junction: 175°C (Max)
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SR1503HA0G

DIODE SCHOTTKY 30V 15A R-6

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Operating Temperature - Junction: -50°C ~ 150°C
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Output by:

	Значение	Кол‑во
	10000A ⇒	7
	1000A ⇒	8
	1.001A ⇒	2
	100A ⇒	179
	100A (DC) ⇒	39
	100mA ⇒	462
	100mA (DC) ⇒	104
	10.1A (DC) ⇒	3
	1022A ⇒	2
	102A ⇒	3
	10.2A ⇒	1
	1030A ⇒	4
	1032A ⇒	1
	10450A ⇒	1
	104A ⇒	5
	1050A ⇒	8
	105A ⇒	2
	105A (DC) ⇒	2
	1065A ⇒	2
	106A (DC) ⇒	1
	1070A ⇒	5
	1080A ⇒	2
	10815A ⇒	2
	109A ⇒	1
	109A (DC) ⇒	2
	10A ⇒	1626
	10A (DC) ⇒	219
	10mA ⇒	11
	10mA (DC) ⇒	13
	1100A ⇒	12
	1104A ⇒	1
	1105A ⇒	1
	110A ⇒	21
	110A (DC) ⇒	3
	110mA (DC) ⇒	3
	11140A ⇒	1
	112A ⇒	1
	11.2A (DC) ⇒	1
	1140A ⇒	1
	11.5A (DC) ⇒	13

Current - Average Rectified (Io) (40)