- Current - Average Rectified (Io)
- Manufacturer
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 700µA @ 40V
- Operating Temperature - Junction: -65°C ~ 150°C
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Operating Temperature - Junction: -65°C ~ 150°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: SMC Diode Solutions
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.5mA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Operating Temperature - Junction: -65°C ~ 150°C
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Package / Case: Powermite®3
- Supplier Device Package: Powermite 3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 300µA @ 35V
- Capacitance @ Vr, F: 700pF @ 4V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: SMC Diode Solutions
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1200V
- Capacitance @ Vr, F: 772pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: Powermite®3
- Supplier Device Package: Powermite 3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 300µA @ 35V
- Capacitance @ Vr, F: 700pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 710mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Operating Temperature - Junction: -65°C ~ 175°C
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 300µA @ 45V
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Offers in stock:
- 10
- 15
- 50
- 100