Diodes - Rectifiers - Arrays 10A (DC) | Diodes

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Found: 219

RJU6052TDPP-EJ#T2

DIODE GEN PURP 600V 10A TO220FP

Renesas Electronics America Inc
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FP-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 3V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Operating Temperature - Junction: 150°C (Max)
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SRA10100

DIODE SCHOTTKY 100V 10A TO220AC

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
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HERAF1008G

DIODE GEN PURP 10A 1000V IT0-220

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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SCS210KE2C

DIODE SCHOTTKY 1200V 10A TO247

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Operating Temperature - Junction: 175°C (Max)
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SIDC06D60E6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
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CLS02(TE16L,HIT,Q)

DIODE SCHOTTKY 40V 10A L-FLAT

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: L-FLAT™
- Supplier Device Package: L-FLAT™ (4x5.5)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Operating Temperature - Junction: -40°C ~ 125°C
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C4D02120A

DIODE SCHOTTKY 1.2KV 2A TO220-2

Cree/Wolfspeed
- Manufacturer: Cree/Wolfspeed
- Series: Z-Rec®
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 167pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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SICF1060P-BP

SIC SCHOTTKY BARRIER , 10A ,650V

Micro Commercial Co
- Manufacturer: Micro Commercial Co
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: ITO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 44 µA @ 650 V
- Capacitance @ Vr, F: 452pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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SRAF10100

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
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UJ3D06520KSD

650V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC
- Manufacturer: UnitedSiC
- Series: Gen-III
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 120µA @ 650V
- Capacitance @ Vr, F: 654pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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MSC010SDA120K

DIODE SCHOTTKY 1.2KV 10A TO220-2

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220 [K]
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
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S10JC R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation
- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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CLS03(TE16L,PSD,Q)

DIODE SCHOTTKY 60V 10A L-FLAT

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: L-FLAT™
- Supplier Device Package: L-FLAT™ (4x5.5)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Operating Temperature - Junction: -40°C ~ 125°C
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CLS03(TE16L,PCD,Q)

DIODE SCHOTTKY 60V 10A L-FLAT

Toshiba Semiconductor and Storage
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: L-FLAT™
- Supplier Device Package: L-FLAT™ (4x5.5)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Operating Temperature - Junction: -40°C ~ 125°C
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IDW10G65C5FKSA1

DIODE SCHOTTKY 650V 10A TO247-3

Infineon Technologies
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 400µA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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