- Current - Average Rectified (Io)
- Manufacturer
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: NXP USA Inc.
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 600ns
- Current - Reverse Leakage @ Vr: 100µA @ 1300V
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: L-FLAT™
- Supplier Device Package: L-FLAT™ (4x5.5)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: 420pF @ 10V, 1MHz
- Operating Temperature - Junction: -40°C ~ 125°C
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: L-FLAT™
- Supplier Device Package: L-FLAT™ (4x5.5)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: 530pF @ 10V, 1MHz
- Operating Temperature - Junction: -40°C ~ 125°C
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- Manufacturer: UnitedSiC
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 110µA @ 1200V
- Capacitance @ Vr, F: 510pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK (TO-252)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 44 µA @ 650 V
- Capacitance @ Vr, F: 452pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 340µA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Microsemi Corporation
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
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- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FP-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 360V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 360V
- Operating Temperature - Junction: 150°C (Max)
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 62µA @ 1200V
- Capacitance @ Vr, F: 525pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: SemiQ
- Series: AMP
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2L (DPAK)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 20µA @ 1200V
- Capacitance @ Vr, F: 635pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Renesas Electronics America
- Mounting Type: Surface Mount
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 90µA @ 600V
- Capacitance @ Vr, F: 290pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Vishay General Semiconductor - Diodes Division
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 55 µA @ 650 V
- Capacitance @ Vr, F: 430pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.95V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Operating Temperature - Junction: -40°C ~ 175°C
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- Offers in stock:
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- 100