- Current - Average Rectified (Io)
- Manufacturer
-
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Current - Average Rectified (Io) (per Diode)
- Series
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- Manufacturer: Wolfspeed, Inc.
- Series: Z-Rec®
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 167pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Rohm Semiconductor
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FM
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 500pF @ 1V, 1MHz
- Operating Temperature - Junction: 175°C (Max)
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- Manufacturer: Rochester Electronics, LLC
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 1.7mA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Package / Case: L-FLAT™
- Supplier Device Package: L-FLAT™ (4x5.5)
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Operating Temperature - Junction: -40°C ~ 125°C
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 44 µA @ 650 V
- Capacitance @ Vr, F: 36pF @ 400V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
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- Manufacturer: Cree/Wolfspeed
- Series: Z-Rec®
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 167pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Comchip Technology
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 650V
- Capacitance @ Vr, F: 710pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 180µA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 170pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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- Manufacturer: Taiwan Semiconductor Corporation
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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- 15
- 50
- 100