• Current - Average Rectified (Io)
  • Manufacturer
Found: 219
  • DIODE SCHOTTKY 700V 10A TO220-3
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 700V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
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  • DIODE SCHOTTKY 650V 10A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 180µA @ 650V
    • Capacitance @ Vr, F: 300pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 600V 10A TO220AC
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 200V 10A TO220AC
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 10µA @ 200V
    • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE GEN PURP 10A 400V IT0-220A
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: ITO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 50ns
    • Current - Reverse Leakage @ Vr: 10µA @ 400V
    • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE SCHOTTKY 600V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 140µA @ 600V
    • Capacitance @ Vr, F: 480pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE SCHOTTKY 10A 45V TO220AB
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AC
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 45V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100µA @ 45V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE SCHOTTKY 45V 10A TO277A
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Series: Automotive, AEC-Q101, eSMP®, TMBS®
    • Mounting Type: Surface Mount
    • Package / Case: TO-277, 3-PowerDFN
    • Supplier Device Package: TO-277A (SMPC)
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 45V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 800µA @ 45V
    • Operating Temperature - Junction: -40°C ~ 150°C
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  • DIODE SCHOTTKY 650V 10A DPAK
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 125µA @ 650V
    • Capacitance @ Vr, F: 325pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 1200V SIC SCHOTTKY BARRIER DIODE
    Panjit International Inc.
    • Manufacturer: Panjit International Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252AA
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 100µA @ 1200V
    • Capacitance @ Vr, F: 529pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE SCHOTTKY 600V 10A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-1
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 90µA @ 600V
    • Capacitance @ Vr, F: 290pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 650V SIC SCHOTTKY BARRIER DIODE
    Panjit International Inc.
    • Manufacturer: Panjit International Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 70µA @ 650V
    • Capacitance @ Vr, F: 364pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 10A 600V IT0-220A
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: ITO-220AC
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 80ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE SCHOTTKY TO220FP
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: TO-220AB-2L
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 10µA @ 600V
    • Operating Temperature - Junction: 150°C (Max)
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  • 650V SIC SCHOTTKY BARRIER DIODE
    Panjit International Inc.
    • Manufacturer: Panjit International Inc.
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252AA
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 70µA @ 650V
    • Capacitance @ Vr, F: 364pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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