- Manufacturer
- Voltage - Peak Reverse (Max)
- Current - Average Rectified (Io)
- Supplier Device Package
-
- Operating Temperature
- Current - Reverse Leakage @ Vr
- Voltage - Forward (Vf) (Max) @ If
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBJ2502-05-G | BRIDGE RECT 1PHASE 200V 25A GBJ | Comchip Technology | 4-SIP, GBJ | 200V | 25A | Single Phase | Through Hole | GBJ | Standard | -55°C ~ 150°C (TJ) | 10µA @ 200V | 1V @ 12.5A | |
| GBPC3504 | BRIDGE RECT 1PHASE 400V 35A GBPC | Diodes Incorporated | 4-Square, GBPC | 400V | 35A | Single Phase | QC Terminal | GBPC | Standard | -65°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 17.5A | |
| ABSF15M | 1BRect, 1000V, 1.5A, 150ns | Diotec Semiconductor | 4-SMD, Gull Wing | 1kV | 1.5A | Single Phase | Surface Mount | ABS | Standard | -50°C ~ 150°C (TJ) | 2µA @ 1000V | 1.3V @ 800mA | |
| VBO22-16NO8 | BRIDGE RECT 1P 1.6KV 21A FO-B | IXYS | 4-Square, FO-B | 1.6kV | 21A | Single Phase | QC Terminal | FO-B | Standard | -40°C ~ 150°C (TJ) | 300µA @ 1600V | 2.2V @ 150A | |
| VBO55-08NO7 | BRIDGE RECT 1P 800V 55A FO-T-A | IXYS | FO-T-A | 800V | 55A | Single Phase | Chassis Mount | FO-T-A | Standard | -40°C ~ 150°C (TJ) | 500µA @ 800V | 1.6V @ 150A | |
| 802-1 | SINGLE PHASE BRIDGE | Microchip Technology | |||||||||||
| MB6S-TP | BRIDGE RECT 1P 600V 500MA MBS-1 | Micro Commercial Co | TO-269AA, 4-BESOP | 600V | 500mA | Single Phase | Surface Mount | MBS-1 | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1V @ 400mA | |
| MSDM200-18 | BRIDGE RECT 3P 1.8KV 200A M3-1 | Microsemi Corporation | M3-1 | 1.8kV | 200A | Three Phase | Chassis Mount | M3-1 | Standard | -40°C ~ 150°C (TJ) | 500µA @ 1800V | 1.45V @ 200A | |
| GBJ2508TB | BRIDGE RECT 1PHASE 800V 25A GBJ | SMC Diode Solutions | 4-ESIP | 800V | 25A | Single Phase | Through Hole | GBJ | Standard | -55°C ~ 150°C (TJ) | 10µA @ 800V | 1.1V @ 12.5A | |
| KBU602G T0 | BRIDGE RECT 1PHASE 100V 6A KBU | Taiwan Semiconductor Corporation | 4-SIP, KBU | 100V | 6A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 6A | |
| 4GBL01 | BRIDGE RECT 3PHASE 100V 4A GBL | Vishay General Semiconductor - Diodes Division | 4-SIP, GBL | 100V | 4A | Three Phase | Through Hole | GBL | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | ||
| DF02SA-E3/45 | BRIDGE RECT 1PHASE 200V 1A DFS | Vishay General Semiconductor - Diodes Division | 4-SMD, Gull Wing | 200V | 1A | Single Phase | Surface Mount | DFS | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 1A | |
| BU2006-E3/51 | BRIDGE RECT 1P 600V 3.5A BU | Vishay General Semiconductor - Diodes Division | 4-SIP, BU | 600V | 3.5A | Single Phase | Through Hole | isoCINK+™ BU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.05V @ 10A | |
| GBPC110-E4/51 | BRIDGE RECT 1PHASE 1KV 2A GBPC1 | Vishay General Semiconductor - Diodes Division | 4-Square, GBPC-1 | 1kV | 2A | Single Phase | Through Hole | GBPC1 | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1V @ 1.5A | |
| 3N259-E4/45 | BRIDGE RECT 1PHASE 1KV 2A KBPM | Vishay General Semiconductor - Diodes Division | 4-SIP, KBPM | 1kV | 2A | Single Phase | Through Hole | KBPM | Standard | -55°C ~ 165°C (TJ) | 5µA @ 1000V | 1.1V @ 3.14A |
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