- Supplier Device Package
- Manufacturer
- Diode Type
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Tolerance
|
Supplier Device Package
|
Operating Temperature
|
Speed
|
Power - Max
|
Voltage - Zener (Nom) (Vz)
|
Impedance (Max) (Zzt)
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CD1005-Z22 | DIODE ZENER 22V 200MW 1005 | Bourns Inc. | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C | 200mW | 22V | 55 Ohms | 100nA @ 17V | ||||||||
CD1005-Z2V4 | DIODE ZENER 2.4V 200MW 1005 | Bourns Inc. | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C | 200mW | 2.4V | 85 Ohms | 100µA @ 1V | ||||||||
CD1005-Z7V5 | DIODE ZENER 7.5V 200MW 1005 | Bourns Inc. | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C | 200mW | 7.5V | 7 Ohms | 100nA @ 5V | ||||||||
CD1005-Z2 | DIODE ZENER 2V 200MW 1005 | Bourns Inc. | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C | 200mW | 2V | 100 Ohms | 100µA @ 1V | ||||||||
TSZL52C24-F0 RWG | DIODE ZENER 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 24V | 80 Ohms | 100nA @ 18V | 900mV @ 10mA | |||||||
TSS0340L RWG | DIODE SCHOTTKY 45V 30MA 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | 30mA | Schottky | Surface Mount | 1005 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 40V | 1.5pF @ 1V, 1MHz | 370mV @ 1mA | 45V | -40°C ~ 125°C | ||||||
TSZL52C10 RWG | DIODE ZENER 10V 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 10V | 15 Ohms | 100nA @ 7.5V | 900mV @ 10mA | |||||||
TSZL52C22 RWG | DIODE ZENER 22V 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 22V | 55 Ohms | 100nA @ 17V | 900mV @ 10mA | |||||||
TSZL52C36-F0 RWG | DIODE ZENER 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 36V | 90 Ohms | 100nA @ 27V | 900mV @ 10mA | |||||||
TSZL52C5V6-F0 RWG | DIODE ZENER 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 5.6V | 40 Ohms | 100nA @ 1V | 900mV @ 10mA | |||||||
TSZL52C6V8-F0 RWG | DIODE ZENER 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 6.8V | 8 Ohms | 100nA @ 3V | 900mV @ 10mA | |||||||
TSZL52C3V6-F0 RWG | DIODE ZENER 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 3.6V | 95 Ohms | 15µA @ 1V | 900mV @ 10mA | |||||||
TSZL52C3V0-F0 RWG | DIODE ZENER 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 3V | 95 Ohms | 50µA @ 1V | 900mV @ 10mA | |||||||
TSZL52C27 RWG | DIODE ZENER 27V 200MW 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | Surface Mount | ±5% | 1005 | -55°C ~ 125°C (TJ) | 200mW | 27V | 80 Ohms | 100nA @ 20V | 900mV @ 10mA | |||||||
TSS42L RWG | DIODE SCHOTTKY 30V 200A 1005 | Taiwan Semiconductor Corporation | 1005 (2512 Metric) | 200mA | Schottky | Surface Mount | 1005 | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 25V | 10pF @ 1V, 1MHz | 650mV @ 50mA | 30V | 5ns | -55°C ~ 125°C |
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