Diodes Microchip Technology Chip

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 274

GC4731-00

SI LIMITER NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.1pF @ 6V, 1MHz
- Power Dissipation (Max): 2W
- Voltage - Peak Reverse (Max): 15V
- Resistance @ If, F: 2Ohm @ 10mA, 100MHz
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GC4215-150B

SI PIN NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
- Current - Max: 10mA
- Voltage - Peak Reverse (Max): 100V
- Resistance @ If, F: 350mOhm @ 20mA, 1GHz
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GC15012-150D

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 6.8pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 400 @ 4V, 50MHz
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MV31013-150A

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 1pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 7.7
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 3000 @ 4V, 50MHz
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KV2133-150A

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.7pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Q @ Vr, F: 850 @ 4V, 50MHz
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GC4731-150C

SI LIMITER NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.1pF @ 6V, 1MHz
- Power Dissipation (Max): 2W
- Voltage - Peak Reverse (Max): 15V
- Resistance @ If, F: 2Ohm @ 10mA, 100MHz
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GC15012-150D/TR

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 6.8pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 400 @ 4V, 50MHz
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GC6002-150A/TR

SI NOISE NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 1pF @ 6V, 1MHz
- Voltage - Peak Reverse (Max): 14V
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GC4210-154-2

SI PIN NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.06pF @ 10V, 1MHz
- Current - Max: 10mA
- Voltage - Peak Reverse (Max): 100V
- Resistance @ If, F: 1.5Ohm @ 20mA, 1GHz
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GC15006-150E/TR

SI TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.14pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 1200 @ 4V, 50MHz
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GC4722-150A

SI LIMITER NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.3pF @ 6V, 1MHz
- Power Dissipation (Max): 10W
- Voltage - Peak Reverse (Max): 120V
- Resistance @ If, F: 1Ohm @ 10mA, 100MHz
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GC4711-00

SI LIMITER NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.15pF @ 6V, 1MHz
- Power Dissipation (Max): 3W
- Voltage - Peak Reverse (Max): 45V
- Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
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GC4701-150A

SI LIMITER NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.15pF @ 6V, 1MHz
- Power Dissipation (Max): 2W
- Voltage - Peak Reverse (Max): 20V
- Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
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MV30018-150A/TR

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 3pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 6
- Capacitance Ratio Condition: C2/C20
- Q @ Vr, F: 2500 @ 4V, 50MHz
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MPS4102-013S

SI PIN NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.02pF @ 50V, 1GHz
- Current - Max: 100mA
- Power Dissipation (Max): 3W
- Voltage - Peak Reverse (Max): 80V
- Resistance @ If, F: 2.5Ohm @ 100mA, 1GHz
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