Diodes Microchip Technology Chip

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 274

GC9704-150A

SI SCHOTTKY NON HERMETIC EPSM SM

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 5V
- Current - Average Rectified (Io): 10mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Current - Reverse Leakage @ Vr: 100nA @ 1V
- Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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MV34005-150A

GAAS TVAR NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 2.2pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 15V
- Capacitance Ratio: 7.4
- Capacitance Ratio Condition: C2/C12
- Q @ Vr, F: 1800 @ 4V, 50MHz
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GC1501-00

SI TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 1pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 30V
- Capacitance Ratio: 3.4
- Capacitance Ratio Condition: C0/C30
- Q @ Vr, F: 3800 @ 4V, 50MHz
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GC2510-150A/TR

SI SRD NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.4pF @ 6V, 1MHz
- Voltage - Peak Reverse (Max): 15V
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GC4713-154-4/TR

SI LIMITER NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
- Power Dissipation (Max): 5W
- Voltage - Peak Reverse (Max): 45V
- Resistance @ If, F: 1Ohm @ 10mA, 100MHz
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GC4712-150A

SI LIMITER NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.3pF @ 6V, 1MHz
- Power Dissipation (Max): 4W
- Voltage - Peak Reverse (Max): 45V
- Resistance @ If, F: 1.2Ohm @ 10mA, 100MHz
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MV31001-P00

GAAS TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.6pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 15V
- Capacitance Ratio: 4.2
- Capacitance Ratio Condition: C2/C12
- Q @ Vr, F: 4000 @ 4V, 50MHz
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GC4713-01

SI LIMITER NON HERMETIC CHIP W L

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.5pF @ 6V, 1MHz
- Power Dissipation (Max): 5W
- Voltage - Peak Reverse (Max): 45V
- Resistance @ If, F: 1Ohm @ 10mA, 100MHz
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GC15007-00

SI TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Series: GC15000
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.2pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 13
- Capacitance Ratio Condition: C0/C20
- Q @ Vr, F: 1000 @ 4V, 50MHz
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GC4431-01

SI PIN NON HERMETIC CHIP W LEAD

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.25pF @ 50V, 1MHz
- Current - Max: 50mA
- Voltage - Peak Reverse (Max): 300V
- Resistance @ If, F: 1.2Ohm @ 100mA, 100MHz
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KV2001-00

SI TVAR NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 3.9pF @ 20V, 1MHz
- Voltage - Peak Reverse (Max): 22V
- Capacitance Ratio: 5.8
- Capacitance Ratio Condition: C4/C20
- Q @ Vr, F: 220 @ 4V, 50MHz
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GC4225-00

SI PIN NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
- Current - Max: 10mA
- Voltage - Peak Reverse (Max): 250V
- Resistance @ If, F: 600mOhm @ 20mA, 1GHz
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MV2003-30

GAAS TVAR HERMETIC PILL

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Chip
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GC4225-150B

SI PIN NON HERMETIC EPSM SMT

Microchip Technology
- Manufacturer: Microchip Technology
- Operating Temperature: -55°C ~ 150°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: PIN - Single
- Capacitance @ Vr, F: 0.5pF @ 10V, 1MHz
- Current - Max: 10mA
- Voltage - Peak Reverse (Max): 250V
- Resistance @ If, F: 600mOhm @ 20mA, 1GHz
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GC2511-00

SI SRD NON HERMETIC CHIP

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C
- Package / Case: Die
- Supplier Device Package: Chip
- Diode Type: Single
- Capacitance @ Vr, F: 0.6pF @ 6V, 1MHz
- Voltage - Peak Reverse (Max): 15V
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