Diodes Infineon Technologies

Manufacturer
Diode Type
Supplier Device Package
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 1755

DD260N12KKHPSA1

DIODE ARRAY MOD 1700V 410A

Infineon Technologies
- Manufacturer: Infineon Technologies
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DD46S12KHPSA1

DIODE MODULE GP 1200V 64A

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 125°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 64A
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DD171N18KHPSA2

THYR / DIODE MODULE DK

Infineon Technologies
- Manufacturer: Infineon Technologies
- Series: DD171N
- Mounting Type: Chassis Mount
- Package / Case: Module
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Operating Temperature - Junction: 150°C
- Diode Configuration: 1 Pair Series Connection
- Current - Average Rectified (Io) (per Diode): 171A
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IDW50E60

IDW50E60 - SILICON POWER DIODE

Infineon Technologies
- Manufacturer: Infineon Technologies
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IDM10G120C5XTMA1

DIODE SCHTKY 1200V 38A PGTO252-2

Infineon Technologies
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 38A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 62µA @ 12V
- Capacitance @ Vr, F: 29pF @ 800V, 1MHz
- Operating Temperature - Junction: -55°C ~ 150°C
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BB56502VH7902XTSA1

DIODE VAR CAP 30V 20MA SC79

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Diode Type: Single
- Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
- Voltage - Peak Reverse (Max): 30V
- Capacitance Ratio: 11
- Capacitance Ratio Condition: C1/C28
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BB439E6327HTSA1

DIODE RF SGL 28V 20MA SOD323-2

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
- Diode Type: Single
- Capacitance @ Vr, F: 6pF @ 25V, 1MHz
- Voltage - Peak Reverse (Max): 28V
- Capacitance Ratio: 8
- Capacitance Ratio Condition: C2/C25
- Q @ Vr, F: 600 @ 25V, 200MHz
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BAT5402LRHE6327XTSA1

DIODE SCHOTTKY 30V 200MA TSLP-2

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2-7
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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DD104N14KAHPSA1

DIODE MODULE 1200V 160A

Infineon Technologies
- Manufacturer: Infineon Technologies
- Series: DD104N
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SMBD914E6327HTSA1

DIODE GP 100V 250MA SOT23-3

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Operating Temperature - Junction: 150°C (Max)
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BAS7007E6433HTMA1

DIODE ARRAY SCHOTTKY 70V SOT143

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT-143-3D
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Operating Temperature - Junction: 150°C (Max)
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 70mA (DC)
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BBY 56-02W E6327

DIODE TUNING 10V 20MA SCD-80

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-80
- Supplier Device Package: SCD-80
- Diode Type: Single
- Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
- Voltage - Peak Reverse (Max): 10V
- Capacitance Ratio: 3.3
- Capacitance Ratio Condition: C1/C3
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IDP30E60

IDP30E60 - SILICON POWER DIODE

Infineon Technologies
- Manufacturer: Infineon Technologies
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F43L50R07W2H3FB11BPSA1

MOD DIODE BRIDGE EASY2B-2-1

Infineon Technologies
- Manufacturer: Infineon Technologies
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PX8244HDMG008XTMA1

LED PX8244HDMG008XTMA1

Infineon Technologies
- Manufacturer: Infineon Technologies
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